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发明授权
CN106158668B 制造半导体装置的方法 有权

制造半导体装置的方法
摘要：
本发明公开了一种制造半导体装置的方法。该方法包含：准备包含多个凸起部形成在一基板上的一晶圆；这些突起部向上突起在基板的一表面并且具有从基板的表面上测量的一高度。此方法更包含决定代表相邻的突起部之间的间隔的分布的一间隔分布，以及基于高度和间隔分布计算一注入角度。此注入角度为基板的一法线方向和一注入方向之间的一角度。此方法也包含以计算的注入角度注入离子。
摘要（英）：

The invention discloses a method for manufacturing a semiconductor device. The method comprises the steps of preparing a wafer which is formed on a substrate and contains a plurality of bosses, wherein the bosses protrude at a surface of the substrate and has a height measured from the surface of the substrate; determining interval distribution which represents spaced distribution between the adjacent bosses; calculating an implantation angle based on the height and the interval distribution, wherein the implantation angle is an angle between a normal direction and an implantation direction of the substrate; and carrying out ion implantation according to the calculated implantation angle.

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