The invention discloses a capacitance-type absolute-pressure micro-pressure gas pressure sensor based on a SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology, which relates to the field of capacitance-type absolute-pressure micro-pressure gas pressure sensor sensitive chips. The capacitance-type absolute-pressure micro-pressure gas pressure sensor based on the SOI-MEMS technology comprises an SOI wafer device layer, a silicon dioxide layer, an SOI wafer substrate layer and bonded and packaged cover plate glass, wherein the SOI wafer device layer has a square structure and is horizontally located at the bottom part; the silicon dioxide layer is fixedly arranged on the upper surface of the SOI wafer device layer; the SOI wafer substrate layer is fixedly arranged on the upper surface of the silicon dioxide layer; and the bonded and packaged cover plate glass is fixedly arranged on the upper surface of the SOI wafer substrate layer. An electrode lead can be prevented from passing through a vacuum cavity packaged and bonded interface, the vacuum packaging performance and the reliability of the micro-pressure sensor are increased, the performance indexes, the consistency and the yield of the sensor can be well ensured, the needed micro-nano process is simple, and the realization cost is low.