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发明公开
CN107104051A 半导体元件以及其制作方法 有权

半导体元件以及其制作方法
摘要：
本发明公开一种半导体元件以及其制作方法，其于形成了对应外延层的第一开孔之后再形成对应栅极结构的第二开孔，并第二开孔形成之后进行预先非晶化注入制作工艺以于外延层中形成非晶区，由此避免用以形成第二开孔的制作工艺影响到非晶区的状况。以本发明的制作方法形成的半导体元件包括接触结构设置与合金层。接触结构设置于第二开孔中以与金属栅极电连接，合金层设置于金属栅极上且设置于接触结构与金属栅极之间，且合金层包括金属栅极的材料的合金。
摘要（英）：

The invention discloses a semiconductor element and a manufacturing method thereof. A first hole corresponding to an epitaxial layer is formed and then a second hole corresponding to a gate structure is formed, and the pre-amorphous injection manufacturing technology is performed after the second hole is formed so that an amorphous region is formed in the epitaxial layer, and thus the situation of the influence of the manufacturing technology used for forming the second hole on the amorphous region can be avoided. The semiconductor element formed by the manufacturing method comprises a contact structure and an alloy layer. The contact structure is arranged in the second hole so as to be electrically connected with the metal gate. The alloy layer is arranged on the metal gate and arranged between the contact structure and the metal gate, and the alloy layer includes the alloy of the material of the metal gate.

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