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发明公开
CN107109691A 单晶金刚石材料、单晶金刚石芯片和穿孔工具 有权

单晶金刚石材料、单晶金刚石芯片和穿孔工具
摘要：
在单晶金刚石材料中，非置换型氮原子的浓度为200ppm以下，置换型氮原子的浓度低于所述非置换型氮原子的浓度，并且所述单晶金刚石材料具有偏角为20°以下的晶体生长主表面。在单晶金刚石芯片中，非置换型氮原子的浓度可以为200ppm以下，置换型氮原子的浓度可以低于所述非置换型氮原子的浓度，并且所述单晶金刚石芯片可以具有偏角为20°以下的主表面。一种穿孔工具，其包含单晶金刚石拉丝模，其中在所述单晶金刚石拉丝模中，非置换型氮原子的浓度为200ppm以下，置换型氮原子的浓度低于所述非置换型氮原子的浓度，并且所述单晶金刚石拉丝模具有由‑5以上且5以下的整数密勒指数表示的低指数面，所述低指数面的垂线相对于拉丝用孔的取向的偏角为20°以下。
摘要（英）：

This single crystal diamond material has a concentration of unsubstituted nitrogen atoms of 200 ppm or less, a concentration of substituted nitrogen atoms lower than the concentration of unsubstituted nitrogen atoms, and an off-angle of a crystal growth main plane of 20 degrees or less. This single crystal diamond tip has a concentration of unsubstituted nitrogen atoms of 200 ppm or less, a concentration of substituted nitrogen atoms lower than the concentration of unsubstituted nitrogen atoms, and an off-angle of a main plane of the single crystal diamond tip of 20 degrees or less. This drilling tool includes a single crystal diamond die which has a concentration of unsubstituted nitrogen atoms of 200 ppm or less, a concentration of substituted nitrogen atoms lower than the concentration of unsubstituted nitrogen atoms, and an off-angle of 20 degrees or less of a perpendicular line of a low index plane for which the Miller index of a single crystal die with respect to the orientation of a wiredrawing hole is indicated by an integer of -5 to 5.

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