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发明公开
CN107146831A 基于r面Al2O3衬底的a面Ⅲ族氮化物的发光二极管 有权

基于r面Al<base:Sub>2</base:Sub>O<base:Sub>3</base:Sub>衬底的a面Ⅲ族氮化物的发光二极管
摘要：
本发明公开了一种基于r面Al2O3衬底的a面Ⅲ族氮化物的发光二极管，主要解决现有LED生长步骤多，工艺周期长的问题。其包括：r面Al2O3衬底层、AlN成核层、发光层和电极，其中AlN成核层和发光层之间设有SiN掩膜层，该SiN掩膜层表面设有数根条纹，AlN成核层包括一层温度为750‑900℃的低温AlN成核层和950‑1100℃的高温AlN成核层，发光层为一层a面Ⅲ族氮化物层，该Ⅲ族氮化物采用GaN或AlN或AlGaN，分别发紫外光、极紫外光和深紫外光。本发明利用a面Ⅲ族氮化物内的反型畴代替传统LED的量子阱发光，简化了器件结构和制作流程，缩短了工艺周期，可用于照明，显示屏和背光源。
摘要（英）：

The invention discloses an r-surface Al<2>O<3> substrate-based a-surface III-group nitride light emitting diode, and mainly aims to solve the problems of more growth steps and long technological period of the existing LED. The light emitting diode comprises an r-surface Al<2>O<3> substrate layer, an AlN nucleating layer, a light emitting layer and an electrode, wherein an SiN mask layer is arranged between the AlN nucleating layer and the light emitting layer; multiple stripes are arranged on the surface of the SiN mask layer; the AlN nucleating layer comprises a low-temperature AlN nucleating layer with a temperature of 750-900 DEG C and a high-temperature AlN nucleating layer with a temperature of 950-1,100 DEG C; the light emitting layer is an a-surface III-group nitride layer; and the III-group nitride adopts GaN or AlN or AlGaN for emitting ultraviolet light, extreme ultraviolet light and deep ultraviolet light respectively. The inversion domain in the a-surface III-group nitride is adopted to replace the conventional LED quantum well for light emission, so that the device structure and manufacturing process are simplified, the technological period is shortened, and the light emitting diode can be used in illumination, a display screen and a back light source.

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