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发明公开
CN107180785A 半导体装置结构的形成方法 无效 - 撤回

半导体装置结构的形成方法
摘要：
本公开提供半导体装置结构的形成方法。半导体装置结构的形成方法包含在半导体基底上形成介电层。半导体装置结构的形成方法还包含在介电层内形成开口。介电层的第一部分的介电常数小于介电层围绕开口的第二部分的介电常数。半导体装置结构的形成方法还包含在开口内形成导电特征部件。第二部分位于第一部分与导电特征部件之间。再者，半导体装置结构的形成方法包含将第一部分的上部改质，以增加第一部分的上部的介电常数。半导体装置结构的形成方法也包含去除第一部分的上部及第二部分。由本公开的一些实施例的方法形成的半导体装置结构的装置性能及可靠度可显著地提升。
摘要（英）：

Formation methods of a semiconductor device structure are provided. The formation method of the semiconductor device structure includes forming a dielectric layer over a semiconductor substrate. The method also includes forming an opening in the dielectric layer. A dielectric constant of a first portion of the dielectric layer is less than that of a second portion of the dielectric layer surrounding the opening. The method further includes forming a conductive feature in the opening. The second portion is between the first portion and the conductive feature. In addition, the method includes modifying an upper portion of the first portion to increase the dielectric constant of the upper portion of the first portion. The method also includes removing the upper portion of the first portion and the second portion. According to the semiconductor device structure formed by the methods in the embodiment, the device performance and reliability can be substantially enhanced.

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