The invention discloses an ultraviolet LED flip chip, which comprises a substrate, a wiring layer and a chip epitaxial layer arranged sequentially from bottom to top. Through an etching process, one part of the chip epitaxial layer is removed, an n-type semiconductor area for arranging an n electrode is formed, a first inner contact layer passing through an n-type AlGaN layer and a second inner contact layer passing through the n-type AlGaN layer to a transparent conductive layer are arranged inside the chip epitaxial layer respectively, a current release channel for releasing high voltage static electricity is thus formed inside the chip, and thus, the chip can be prevented from being damaged by static electricity; besides, due to the arrangement of a reflecting layer, light emitted downwardly can be reflected to the maximum degree, and the extraction efficiency of the chip can be effectively improved; the contact area between the transparent conductive layer and a p electrode can be increased, and better cooling effects can be acquired; and finally, through arranging a current expanding layer and an electron barrier layer, the speed of flowing upwardly of carriers in the chip and the flow can be enhanced, and the extraction efficiency of the chip is greatly improved.