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CN107210207A 半导体芯片的制造方法和用于该制造方法的掩模一体型表面保护带 无效 - 驳回

半导体芯片的制造方法和用于该制造方法的掩模一体型表面保护带
摘要：
一种半导体芯片的制造方法，其包括下述工序(a)～(d)。(a)在将掩模一体型表面保护带贴合于半导体晶片的图案面侧的状态下，对半导体晶片的背面进行磨削，将晶片固定带贴合于磨削后的背面，利用环形框进行固定的工序；(b)剥离表面保护带而使掩模材料层露出于表面后，使半导体晶片的切割道开口的工序；(c)通过等离子体照射而使半导体晶片单片化为芯片的等离子体切割工序；和(d)通过等离子体照射去除上述掩模材料层的灰化工序。
摘要（英）：

A method for manufacturing a semiconductor chip, said method including the following steps (a) through (d): (a) a step in which, while a mask-integrated surface protection tape is affixed to a pattern surface side of a semiconductor wafer, a back surface of the semiconductor wafer is cut, and a wafer anchoring tape is affixed to the cut back surface and anchored with a ring frame; (b) a step in which, after peeling off the surface protection tape to expose a mask material layer on the surface, streets in the semiconductor wafer are opened; (c) a plasma dicing step in which the semiconductor wafer is separated into chips using plasma irradiation; and (d) an ashing step in which the mask material layer is removed using plasma irradiation.

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