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发明公开
CN107275280A 半导体器件的制造方法及衬底处理装置 有权 转让

半导体器件的制造方法及衬底处理装置
摘要：
本发明涉及半导体器件的制造方法及衬底处理装置。提供一种针对形成有空气隙的半导体器件能够实现良好的特性的技术。将衬底搬入处理室的工序，衬底具有第一布线层，包括第一层间绝缘膜、形成在第一层间绝缘膜之上用作布线的多个含铜膜、使含铜膜间绝缘的布线间绝缘膜以及设于多个含铜膜之间的空隙，和第一防扩散膜，第一防扩散膜构成为形成在含铜膜上表面的一部分的表面上，抑制含铜膜的成分的扩散；和形成含硅膜，向处理室内供给含硅气体，从而在含铜膜之上的没有形成第一防扩散膜的其他部分的表面之上和构成空隙的壁上形成含硅膜。
摘要（英）：

A method of manufacturing a semiconductor device includes: (a) loading into a process chamber a substrate including: a wiring layer including a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wire insulating film electrically insulating the plurality of copper containing film and a recess formed between the plurality of copper-containing film; and a first diffusion barrier film formed on a first portion of a surface of the plurality of copper-containing films to suppress a diffusion of a component of the plurality of copper-containing film; and (b) supplying a silicon-containing gas into the process chamber to form a silicon-containing film on: a surface of the recess; and a second portion of the surface of the plurality of copper-containing films other than the first portion where the first diffusion barrier film is formed.

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