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发明授权
CN107359126B 薄膜晶体管及其制备方法、阵列基板和显示面板 有权

薄膜晶体管及其制备方法、阵列基板和显示面板
摘要：
本发明公开了一种薄膜晶体管及其制备方法、阵列基板和显示面板，涉及显示技术领域。制备方法包括：在基底上依次形成有源层、栅绝缘层和栅电极，其中，有源层包括沟道区域和导体化区域，栅电极在基底上的正投影包含沟道区域在基底上的正投影。薄膜晶体管包括：依次设置在基底上的有源层、栅绝缘层和栅电极，有源层包括沟道区域和与沟道区域两侧相接的导体化区域，栅电极在基底上的正投影包含沟道区域在基底上的正投影。阵列基板包含该薄膜晶体管，显示面板包含该阵列基板。该制备方法降低了顶栅型薄膜晶体管的开态电阻，使得开态电流增加，降低了显示器件的功耗，提高了显示面板的显示质量。
摘要（英）：

There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.

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