The invention provides a method for determining deviation of an implantation angle of an ion implanter. The method comprises following steps of providing a standard silicon chip and an ion implanter; carrying out ion implantation in a unique program on the upper half part of the standard silicon chip in the ion implanter; rotating the standard silicon chip for 180 degrees through the ion implanter and carrying out implantation on the lower half part by use of the same program; carrying out heat wave or square resistance measurement on the standard silicon chip; collecting measurement values of the upper and lower half parts of the standard silicon chip; and according to the measurement values, calculating the deviation of implantation angle of the ion implanter. According to the invention, by carrying out implantation twice on adjustment of torsion angle of the silicon chip, and determining a correction value of the implantation angle of the ion implanter according to the heat wave or square resistance measurement values twice of the silicon chip, effects on correction of the implantation angel of the ion implanter imposed by silicon chip crystals are eliminated.