The invention provides a preparation method of a polycrystalline silicon film. The method is characterized by comprising the steps of (a) depositing an amorphous silicon film; and (b) irradiating theamorphous silicon film for crystallization by using pulsed light. The invention further provides a product of the preparation method and a solar cell comprising the product. The preparation method islow in processing temperature and short in processing time, impurity element diffusion in the amorphous silicon film can be effectively reduced, the damage and influence to a material of the adjacentlayer are reduced and a device obtains relatively excellent performance.