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发明公开
CN107863306A 衬底处理装置及半导体器件的制造方法 有权 转让

衬底处理装置及半导体器件的制造方法
摘要：
本发明涉及衬底处理装置及半导体器件的制造方法。在将不同的处理进行重复从而对膜进行处理的方法中，存在半导体器件的生产率低的问题。提供一种技术，具有：处理衬底的处理容器，向处理容器供给气体的气体供给部，控制衬底的温度的温度控制部，和装置控制部，其以进行下述处理的方式进行控制：温度控制部将衬底维持在第一温度、并且气体供给部向处理容器供给气体，从而形成第一层的处理；及，温度控制部将衬底维持在不同于第一温度的第二温度、并且气体供给部向处理容器供给气体，从而形成不同于第一层的第二层的处理。通过本发明，即便在将不同的处理进行重复从而对膜进行处理的方法中，也能提高半导体器件的生产率。
摘要（英）：

The invention relates to a substrate processing apparatus and a semiconductor device manufacturing method. In the method for repeating different processing steps for processign a film, a problem of low productivity of the semiconductor device exists. The substrate processing apparatus comprises: a processing container for processing a substrate; a gas supply part for supplying a gas to the processing container; a temperature control part for controlling a temperature of the substrate; and an apparatus control part for controlling the temperature control part to maintain a temperature of the substrate at a first temperature and concurrently controlling the gas supply part to supply a gas to the processing container to cause a process of forming a first layer to be performed, and controllingthe temperature control part 223 to maintain the temperature of the substrate 200 at a second temperature different from the first temperature and concurrently controlling the gas supply part to supply a gas to the processing container 202 to cause a process for forming a second layer different from the first layer to be performed.

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