The invention discloses a magnetic atom doped superlattice [GeTe/Sb2tTe3] n material and corresponding control method thereof, wherein the material is doped with magnetic atoms; the structure of the initial superlattice [GeTe/Sb2tTe3] n material before doping has topological insulativity; after the magnetic atoms are doped, the topological insulativity is controlled by the magnetic atoms, the timeinversion symmetry of the initial superlattice [GeTe/Sb2tTe3] n material is destroyed, and the magnetic atoms and the atoms in the adjacent superlattice [GeTe/Sb2tTe3] n material generate a orbital hybridization effect, so that the state density of the doped superlattice [GeTe/Sb2tTe3] n material has an asymmetric effect at the same time in the self-spinning upward direction and in the self-spinning downward direction, and the induced magnetic moment is generated. According to the invention, the specific types of the key doping elements are improved, compared with the prior art, the method can effectively solve the problems that the Dirac cone of the surface state of the topological insulator is not easy to control, and the Dirac point cannot be opened.