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发明公开
CN108206033A 存储器件及其设置导电线的方法 有权

存储器件及其设置导电线的方法
摘要：
一种包括存储器单元阵列区域的存储器件包括：形成在存储器单元阵列区域的第一列导电层中并在列方向上延伸的列选择信号线，形成在存储器单元阵列区域中与第一列导电层不同的第二列导电层中并且在列方向上延伸的全局输入输出数据线，以及形成在存储器单元阵列区域中第一列导电层和第二列导电层之间的屏蔽导电层中的电源线。通过在不同列导电层中形成列选择信号线和全局输入输出数据线并在列导电层之间的屏蔽导电层中形成电源线，可以减少信号线和电源线中的噪声，并且可以增强存储器件的性能。
摘要（英）：

A memory device including a memory cell array region, includes, column selection signal lines formed in a first column conduction layer of the memory cell array region and extending in a column direction, global input-output data lines formed in a second column conduction layer of the memory cell array region different from the first column conduction layer and extending in the column direction and power lines formed in a shield conduction layer of the memory cell array region between the first column conduction layer and the second column conduction layer. The noises in the signal lines and the power lines may be reduced and performance of the memory device may be enhanced by forming the column selection signal lines and the global input-output data lines in different column conduction layers and forming the power lines in the shield conduction layer between the column conduction layers.

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