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发明公开
CN108538979A 发光二极管及其制造方法 无效 - 撤回

发光二极管及其制造方法
摘要：
本发明公开了一种发光二极管及其制造方法，发光二极管制造方法，包含以下多个步骤。形成第一型半导体层。在第一型半导体层上形成第二型半导体层。掺杂杂质进入第二型半导体层的第一部位中。其中在掺杂后，存在于第二型半导体层的第一部位中的杂质的浓度大于第二型半导体层的第二部位的杂质的浓度，使得第二型半导体层的第一部位的电阻率大于第二型半导体层的第二部位的电阻率。第二部位以及第一部位的组合可以限制电流进入第一型半导体层以及第二型半导体层之间的主动层的区域，增强主动层的发光区中的电流密度，从而增进发光二极管的运行稳定性及效率。
摘要（英）：

The invention discloses a light-emitting diode and a method for manufacturing the same. The method includes a plurality of steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, suchthat the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer. The combination of the second portion and the first portion can limit entrance of the current to a region of an active layer between the first semiconductor layer and the second semiconductor layer, and increase the density of the current in a light-emitting region of the active layer so that the operation stability and efficiency of the light-emitting diode can be improved.

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