The invention discloses a micro light emitting element and a manufacturing method thereof. By use of a temporary substrate, an epitaxial structure of a micro light emitting element made of a gallium arsenide and gallium phosphide substrate is transferred. After an epitaxial growing substrate is removed, the following preparation technology of the micro light emitting element is performed. Comparedwith the traditional technology where a chip structure is prepared by use of the epitaxial structure, corrosion to the epitaxial side face can be effectively avoided when the growing substrate is removed through wet etching.