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发明公开
CN108630512A 衬底处理装置、半导体器件的制造方法及存储介质 有权 转让

衬底处理装置、半导体器件的制造方法及存储介质
摘要：
本发明涉及衬底处理装置、半导体器件的制造方法及存储介质，该技术具有：一频率处理室，设置于处理组件内，并对形成有绝缘膜的衬底进行处理；二频率处理室，在处理组件内与一频率处理室相邻，并对经一频率处理室处理后的衬底进行处理；气体供给部，将至少包含硅和杂质的含硅气体分别供给至一频率处理室和二频率处理室；等离子体生成部，分别连接于一频率处理室和二频率处理室；离子控制部，连接于二频率处理室；衬底搬送部，设置于处理组件内，并在一频率处理室与二频率处理室之间搬送衬底；和控制部，至少对气体供给部、等离子体生成部、离子控制部和衬底搬送部进行控制。
摘要（英）：

A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.

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