In one embodiment, the semiconductor light source (1) comprises a semiconductor laser (2) for generating a primary radiation (P) and a conversion element (3) for generating a visible secondary radiation (S) of a longer wavelength from the primary radiation (P). The conversion element (3) has a semiconductor layer sequence (30) with a plurality of quantum well layers (31) for generating the secondary radiation (S). The quantum well layers (31) are preferably three-dimensionally formed, such that the quantum well layers (31) have bends in a cross-sectional view and are oriented at least in someregions obliquely to a growth direction (G) of the semiconductor layer sequence (30).