The invention relates to a surface cleaning method of an LED wafer electrode evaporation gasket. The method comprises the following steps: taking down the evaporation gasket from the planet carrier ofthe evaporation stage, irradiating the gasket surface under the irradiation of pulsed laser with a certain energy density, and then carrying out hot nitrogen drying after ultrasonic cleaning with deionized water to obtain the gasket with no scratch, particulate matter and oxide film on the surface. The invention effectively solves the abnormal problems such as scratch, splitting and evaporation chip off when the evaporation chip is on the shelf, prolongs the service life of the gasket and reduces the cost of the product.