The invention discloses a manufacturing method of an embedded type character line structure and the structure. The manufacturing method comprises the following steps: firstly, providing a substrate, wherein a character line groove is formed in the substrate, and two source/drain doped regions are positioned in the substrate on two sides of the character line groove; then forming a silicon oxide layer covered character line groove; then forming a titanium nitride layer covered silicon oxide layer; then carrying out an oblique angle dopant injection manufacturing technology, and injecting silicon atoms into a titanium nitride layer so that a part of a titanium nitride is converted into a titanium silicon nitride layer; continuing to form a conducting layer into the character line groove; then removing a part of the conducting layer, a part of the titanium silicon nitride layer and a part of silicon oxide so as to form a groove; and finally a cap layer filled groove.