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发明公开
CN109565279A 半导体逻辑元件和逻辑电路 审中-实审

半导体逻辑元件和逻辑电路
摘要：
本发明涉及一种半导体逻辑元件，包括：第一导电类型场效应晶体管和第二导电类型场效应晶体管。所述第一FET的栅极是所述半导体逻辑元件的输入，所述第二FET的漏极被称为所述半导体逻辑元件的输出，并且所述第二FET的源极是所述半导体逻辑元件的源极。通过向所述场效应晶体管的端子施加可适用的电位，可以影响所述逻辑元件的输出的状态。本发明还涉及包括描述的逻辑元件的不同种类的逻辑电路。
摘要（英）：

The invention relates to a semiconductor logic element comprising a field effect transistor of the first conductivity type and a field effect transistor of the second conductivity type. A gate of the first FET is an input of the semiconductor logic element, a drain of the second FET is referred to as the output of the semiconductor logic element and a source of the second FET is the source of the semiconductor logic element. By applying applicable potentials to the terminals of the field effect transistors it is possible to influence the state of the output of the logic element. The invention relates also to different kinds of logic circuitries comprising the described logic element.

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