The invention provides an insulation frame structure for a press-contact IGBT. The insulation frame structure comprises an inner groove, an E electrode upright column, a G electrode upright column, aguiding partition and a shed. The guiding partition and the shed are respectively located on the downside and the outside of the inner groove. The E electrode upright column and the G electrode upright column are vertically disposed inside the inner groove. The shed includes at least two layers of L-shaped shed sheets arranged in sequence. The insulation frame structure provided by the invention has small size, and high versatility and stability, is easy to process and simple for positioning, can effectively solve the problem of insulation coordination under different high voltage levels, andmeets fixed positioning requirements of a multi-chip parallel structure inside a device. The insulation frame structure made by open-die injection moulding of modified plastics is processable in batchand has high electrical insulation strength, anti-creepage performance and excellent mechanical performance. A glue filling port and an exhaust hole are favorable for injecting silicon gel and removing air, thereby reducing partial discharge caused by bubbles and adverse effect caused by thermal expansion.