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发明公开
CN110660800A 半导体器件和生成布局图的方法 有权

半导体器件和生成布局图的方法
摘要：
半导体器件包括：多个鳍，基本上平行于第一方向延伸；多个鳍中的至少一个鳍是伪鳍；以及多个鳍中的至少一个鳍是有源鳍；以及至少一个栅极结构，形成在多个鳍中的相应鳍上方并基本上平行于第二方向延伸，第二方向基本上垂直于第一方向；以及其中，多个鳍和至少一个栅极结构位于包括奇数个鳍的单元区域中。在实施例中，单元区域基本上是矩形的并且具有基本上平行于第一方向的第一边缘和第二边缘；以及第一边缘和第二边缘都不与多个鳍中的任一个重叠。
摘要（英）：

A semiconductor device includes fins extending substantially parallel to a first direction, at least one of the fins being a dummy fin; and at least one of the fins being an active fin; and at least one gate structure formed over corresponding ones of the fins and extending substantially parallel to a second direction, the second direction being substantially perpendicular to the first direction;wherein the fins and the at least one gate structure are located in a cell region which includes an odd number of fins. In an embodiment, the cell region is substantially rectangular and has first andsecond edges which are substantially parallel to the first direction; and neither of the first and second edges overlaps any of the fins.

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