The manufacturing method of bipolar integrated circuit with voltage regulator tube is compatible with manufacturing process of general bipolar integrated circuit. It uses two-step injection method; firstly, forming bipolar transistor base, secondary, using different dosage to form an electrode of voltage regulator tube, and controlling injection quantity and depth of doping zone so as to define maintaining voltage value of voltage regulator tube, so that said invented circuit includes a semiconductor chip. Said chip is first conductive substrate, on its surface the secondary conductive epitaxial layer is grown. Said epitaxial layer is passed through the process of isolation treatment so as to form collector of second conductive transistor or base of first conductive transistor. It is characterized by that on the epitaxial layer some zones are passed through doping treatment so as to obtain some first-conductive zones.