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发明公开
CN1521853A 一种闪存单元及其操作方法 失效 - 权利终止

一种闪存单元及其操作方法
摘要：
一种闪存单元，包括一基底、一选择栅极、一第一型离子掺杂区、一第二型离子浅掺杂区、一第二型离子深掺杂区以及一源极掺杂区。其中，基底具有一堆叠式栅极(stackedgate)；选择栅极形成于基底上并位于堆叠式栅极的一侧；第一型离子掺杂区位于基底中并与选择栅极邻设，以作为闪存单元的漏极；第二型离子浅掺杂区位于堆叠式栅极下方并与第一型离子掺杂区连接；第二型离子深掺杂区位于第一型离子掺杂区周围，并与第二型离子浅掺杂区连接；而源极掺杂区邻设于第二型离子浅掺杂区一侧以作为闪存单元的源极。另外，本发明还揭露一种上述闪存单元的操作方法。
摘要（英）：

A flash memory element comprises a substrate, a selection grid, a first type ion doping region, a second type ion shadow doping region, a second type ion deep doping region and a source ion doping region, wherein the substrate has a stacked gate, the selection grid is formed on the side of the stacked gate on the substrate, the first type ion doping region is arranged in the substrate adjacent to the selection gate as the drain of the flash memory element, the second type ion shadow doping region is located below the stacked gate and is connected to the first type ion doping region, the second type ion deep doping region is located near the first type ion doping region, and is connected to the second type ion shadow doping region, while the source doping region is arranged on the side of the second type ion shadow doping region as the source of the flash memory element. Besides, The invention also provides the method for operating the flash memory element.

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