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Invention Publication
CN1708853A 半导体装置以及半导体装置的制作方法 失效 - 权利终止

半导体装置以及半导体装置的制作方法
Abstract:
本发明的目的是：提供一种不使被剥离层受到损伤的剥离方法，其不仅是具有小面积的被剥离层的剥离，还能成品率很高地进行具有大面积的被剥离层的全面剥离。此外，本发明的课题是提供一种在各种基材上粘贴被剥离层并经轻量化的半导体装置以及其制作方法。特别是，提供一种在柔性薄膜上粘贴以TFT为代表的各种元件(薄膜二极管、由硅的PIN结构成的光电变换元件或硅电阻元件)并经轻量化的半导体装置以及其制作方法。本发明的解决方法是：在基板上设置金属层11，再接在上述金属层11上设置氧化物层12，进而形成被剥离层13，如果以激光照射上述金属层11从而进行氧化形成金属氧化层16，就能够以物理手段在金属氧化物层16的层内或者金属氧化物层16和氧化物层12的界面上进行很好的分离。
Abstract(English):

It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFF, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

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