An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device. Lov region (207) is disposed in n-channel TFT (302) that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions (217 to 220) are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring (305) and gate wiring (306) are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.