The invention relates to a manufacturing method for semiconductor component characterized in that the method comprises the following steps: forming a crystal semiconductor film on a substrate having ainsulating layer; forming a gate insulating film including silicon dioxide by utilizing tetraethoxysilane on the crystal semiconductor film; forming a gate electrode adjacent to the crystal semiconductor film wherein a gate insulating film is inserted between the crystal semiconductor film and the gate electrode, the gate electrode includes a kind of material selected from a group of material oftantalum, titanium, tungsten, molybdenum, silicon; and introducing impurity element to the crystal semiconductor film by the gate insulating film so as to form at least a impurity zone on the crystalsemiconductor film.