The utility model relates to a chip for a micro-electromechanical system (EMES) thermopile infrared detector, which comprises an inner chip and an infrared filtering window on the inner chip. The inner chip comprises a lining bottom provided with a front face, a back face and an air cavity formed by sinking from the front face. The air cavity does not penetrate through the back face of the lining bottom, and the front face is provided with a supporting portion and an infrared heat absorption layer which is located at the supporting portion and in the air cavity. The thickness of the infrared heat absorption layer is larger than that of the supporting portion and smaller than that of the air cavity. A thermopile is arranged on the supporting portion. The lining bottom and the infrared heat absorption layer respectively serve as a cold end and a hot end of the thermopile which comprises a first conducting layer and a second conducting layer which are made of different conducting materials. The first conducting layer and the second conducting layer are led out through a first electrode at the tail end of the first conducting layer and a second electrode at the tail end of the second conducting layer. The top of the first electrode and the top of the second electrode are exposed. The thermopile is made of materials compatible with technology of complementary metal oxide semiconductors (CMOS). The chip for the EMES thermopile infrared detector has high manufacturability.