The utility model relates to a gallium nitride (GaN)-based ipsilateral electrode light-emitting diode (LED) chip structure. The chip structure comprises a substrate and a P electrode and an N electrode located above the substrate, and an N type GaN layer is deposited on the substrate; the N type GaN layer is provided with a quantum well, the quantum well is provided with a P type GaN layer, the P type GaN layer is provided with a transparent conducting layer, a passivation layer is deposited on the transparent conducting layer, the passivation layer is provided with a contact hole, the P electrode is filled in the contact hole, and the P electrode is in equipotential connection with the transparent conducting layer. The chip structure is characterized in that the P type GaN layer under the P electrode is etched to from a P type etching area, the P type etching area extends from the upper surface of the P type GaN layer towards an N type GaN layer, the distance for which the P type etching area extends in the P type GaN layer is smaller than the thickness of the P type GaN layer, and the P electrode is filled in the P type etching area. The GaN-based ipsilateral electrode LED chip structure provided by the utility model can prevent current clogging when electric potential wires are gathered excessively, and reduce a heating phenomenon caused by current clogging.