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实用新型
CN208315587U 一种氮化物发光二极管结构 有权

一种氮化物发光二极管结构
摘要：
本实用新型提供了一种氮化物发光二极管结构，包括衬底，在衬底上设有缓冲层，在缓冲层上依次设有N型层、准备层、第一多量子阱层、第二多量子阱层、P型电子阻挡层和P型层，所述第一多量子阱层包括第一多量子阱层的量子阱和第一多量子阱层的量子垒；所述第二多量子阱层包括第二多量子阱层的量子阱和第二多量子阱层的量子垒；所述第一多量子阱层的量子垒的厚度大于第二多量子阱层的量子垒的厚度。本实用新型通过减薄靠近P型层一侧的量子垒厚度，从而可有效减缓靠近P型层一侧发光阱的“量子限制斯塔克效应”，提升LED的内量子效率。(ESM)同样的发明创造已同日申请发明专利
摘要（英）：

The utility model provides a nitride light emitting diode structure, including the substrate, be equipped with the buffer layer on the substrate, be equipped with N type layer in proper order on the buffer layer, prepare layer, a multi -quantum well layer, the 2nd multi -quantum well layer, P type electronics barrier layer and P type layer, a multi -quantum well layer includes the quantum well ona multi -quantum well layer and the quantum base on a multi -quantum well layer, the 2nd multi -quantum well layer includes the quantum well on the 2nd multi -quantum well layer and the quantum base on the 2nd multi -quantum well layer, the thickness at the quantum base on a multi -quantum well layer is greater than the thickness at the quantum base on the 2nd multi -quantum well layer. The utility model discloses an attenuate is close to the quantum of P type layer one side and builds thickness to can effectively slow down " quantum restriction stark effect " near the luminous trap in P typelayer one side, promote LED's internal quantum efficiency.

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