发明公开
- 专利标题： Semiconductor devices and method for producing the same
- 专利标题（中）： 半导体器件及其制备方法。
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申请号： EP80301576.7申请日： 1980-05-14
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公开(公告)号： EP0019456A1公开(公告)日： 1980-11-26
- 发明人: Kawabe, Yunosuke , Momma, Yoshinobu
- 申请人： FUJITSU LIMITED
- 申请人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 代理机构： Allman, Peter John
- 优先权： JP61229/79 19790518
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L29/72 ; H01L29/06
摘要：
In a semiconductor device comprising at least one bipolar transistor (45) and a VIP isolating layer (43) which are formed in both an epitaxial layer (33) and a semiconductor substrate (31), an impurity-introduced region (37) having the same conductivity type as that of the semiconductor substrate (31) is formed so asto surround the V-groove (36). A buried layer (32) of the bipolartransistor comes into contact with the VIP isolating layer (39,40) to divide the impurity-intorduced region into two parts, one of which is combined with a base region (37) and the other one of which serves as a channel stopper (38).
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