公开(公告)号：EP0019456A1

公开(公告)日：1980-11-26

申请号：EP80301576.7

申请日：1980-05-14

申请人： FUJITSU LIMITED

发明人： Kawabe, Yunosuke ,  Momma, Yoshinobu

IPC分类号： H01L21/76 ,  H01L29/72 ,  H01L29/06

CPC分类号： H01L21/763 ,  H01L21/76 ,  H01L21/76227 ,  H01L29/7325 ,  Y10S148/085 ,  Y10S148/117

摘要： In a semiconductor device comprising at least one bipolar transistor (45) and a VIP isolating layer (43) which are formed in both an epitaxial layer (33) and a semiconductor substrate (31), an impurity-introduced region (37) having the same conductivity type as that of the semiconductor substrate (31) is formed so asto surround the V-groove (36). A buried layer (32) of the bipolartransistor comes into contact with the VIP isolating layer (39,40) to divide the impurity-intorduced region into two parts, one of which is combined with a base region (37) and the other one of which serves as a channel stopper (38).