发明公开
EP0044048A1 Glass passivated high power semiconductor devices
失效
Glaspassivierte Halbleiterbauelemente hoher Leistung。
- 专利标题： Glass passivated high power semiconductor devices
- 专利标题（中）： Glaspassivierte Halbleiterbauelemente hoher Leistung。
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申请号： EP81105364.4申请日： 1981-07-09
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公开(公告)号： EP0044048A1公开(公告)日： 1982-01-20
- 发明人: Ostop, John Anthony , Johnson, Joseph Edgar
- 申请人： WESTINGHOUSE ELECTRIC CORPORATION
- 申请人地址： Westinghouse Building Gateway Center Pittsburgh Pennsylvania 15222 US
- 专利权人： WESTINGHOUSE ELECTRIC CORPORATION
- 当前专利权人： WESTINGHOUSE ELECTRIC CORPORATION
- 当前专利权人地址： Westinghouse Building Gateway Center Pittsburgh Pennsylvania 15222 US
- 代理机构： Fleuchaus, Leo, Dipl.-Ing.
- 优先权： US168818 19800710
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/78 ; H01L23/30
摘要：
The present invention is directed to a process for producing a glass passivated semiconductor device and to the device so produced. The process comprises forming at least one region having a second type of conductivity in a large area body of semiconductor material having a first type of conductivity, forming grooves (40, 42) through top and bottom surfaces (12, 14) of the large area body whereby a plurality of smaller area bodies are defined. The grooves (40, 42) are filled with a glass paste which is solidified in situ and the smaller bodies are cut from the larger body with a laser scribe. Each smaller body cut from the larger body includes the glass filled groove which defined it originally. Electrodes are then affixed to each of the smaller bodies thereby providing a semiconductor device.
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