公开(公告)号：EP0044048A1

公开(公告)日：1982-01-20

申请号：EP81105364.4

申请日：1981-07-09

申请人： WESTINGHOUSE ELECTRIC CORPORATION

发明人： Ostop, John Anthony ,  Johnson, Joseph Edgar

IPC分类号： H01L21/316 ,  H01L21/78 ,  H01L23/30

CPC分类号： H01L23/291 ,  H01L21/56 ,  H01L23/3178 ,  H01L29/0661 ,  H01L2924/0002 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/00

摘要： The present invention is directed to a process for producing a glass passivated semiconductor device and to the device so produced. The process comprises forming at least one region having a second type of conductivity in a large area body of semiconductor material having a first type of conductivity, forming grooves (40, 42) through top and bottom surfaces (12, 14) of the large area body whereby a plurality of smaller area bodies are defined. The grooves (40, 42) are filled with a glass paste which is solidified in situ and the smaller bodies are cut from the larger body with a laser scribe. Each smaller body cut from the larger body includes the glass filled groove which defined it originally. Electrodes are then affixed to each of the smaller bodies thereby providing a semiconductor device.

摘要翻译： 本发明涉及一种玻璃钝化半导体器件的制造方法及其制造方法。 该方法包括在具有第一类型导电性的半导体材料的大面积体中形成具有第二导电类型的至少一个区域，通过大面积的顶表面和底表面（12,14）形成凹槽（40,42） 从而限定多个较小区域体。 凹槽（40,42）填充有玻璃浆料，玻璃浆料就地固化，并用激光划片从较大的身体切割较小的物体。 从较大的身体切割的每个较小的身体包括最初定义的玻璃填充槽。 然后将电极固定到每个较小的主体，从而提供半导体器件。

公开(公告)号：EP0013815B1

公开(公告)日：1986-03-12

申请号：EP79302905.9

申请日：1979-12-14

申请人： WESTINGHOUSE ELECTRIC CORPORATION

发明人： Johnson, Joseph Edgar

IPC分类号： H01L21/56 ,  H01L23/28

CPC分类号： H01L23/3178 ,  H01L21/56 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/66272 ,  H01L29/66363 ,  H01L29/7325 ,  H01L29/74 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP0013815A1

公开(公告)日：1980-08-06

申请号：EP79302905.9

申请日：1979-12-14

申请人： WESTINGHOUSE ELECTRIC CORPORATION

发明人： Johnson, Joseph Edgar

IPC分类号： H01L21/56 ,  H01L23/28

CPC分类号： H01L23/3178 ,  H01L21/56 ,  H01L29/0661 ,  H01L29/66136 ,  H01L29/66272 ,  H01L29/66363 ,  H01L29/7325 ,  H01L29/74 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： The preferred embodiment of the invention comprises a glass sealed thyristor (10) and a method for simultaneously constructing a plurality of thyristors on a common semiconductor wafer (46). The thyristor utilizes a body of semiconductor material with the cathode and base regions (20, 24) extending to one major surface (14) and the anode region (22) extending to the second major surface (16). A groove (36) is etched in the first surface of the body of semiconductor material to expose the PN junction formed at the interface of the cathode emitter and cathode emitter base regions. A second groove (40) is etched in the second major surface to expose the PN junction formed at the interface of the anode emitter region and the anode emitter base region. Ring shaped glass members (42). are fused to the body of semiconductor material to form seals providing environmental protection for the PN junctions exposed by etching the grooves in the major surfaces of the body of semiconductor material. A plurality of thyristors can be simultaneously constructed on a common semiconductor wafer.