发明公开
- 专利标题： Planar multi-level metal-insulator structure comprising a substrate, a conductive interconnection pattern and a superposed conductive structure and a method to form such a structure
- 专利标题（中）： 平面多层金属隔离结构包括衬底，导电互连图案和叠加半导体结构和形成这种结构的方法。
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申请号： EP81106121.7申请日： 1981-08-05
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公开(公告)号： EP0046525A2公开(公告)日： 1982-03-03
- 发明人: Logan, Joseph Skinner , Mauer IV, John Lester , Rothman, Laura Beth , Schwartz, Geraldine Cogin , Standley, Charles Lambert
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Oechssler, Dietrich (DE)
- 优先权： US179145 19800818
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/90 ; H01L23/54
摘要：
The package has at least two levels of conductive interconnected patterns (26, 50A. 50B). The insulation containing the metal filled via openings (36) between the different levels consists of a lower layer (30) of an electrically insulating organic polymer and an overlying oxygen plasma resistant inorganic insulating layer (23).
In the formation of the interconnection metallurgy inorganic insulating layer (23) prohibits overetching in producing the hole pattern in the organic insulating layer (42) laterally surrounding the conductive pattern (50A, 50B) in the next level. The entirety of the insulation between the levels is thus ensured.
In the formation of the interconnection metallurgy inorganic insulating layer (23) prohibits overetching in producing the hole pattern in the organic insulating layer (42) laterally surrounding the conductive pattern (50A, 50B) in the next level. The entirety of the insulation between the levels is thus ensured.
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