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公开(公告)号：EP0260473B1
公开(公告)日：1991-10-23
申请号：EP87112149.7
申请日：1987-08-21
IPC分类号： H01L21/265 , H01L21/314
CPC分类号： H01L21/28185 , H01L21/2652 , H01L21/28202 , H01L21/3145 , H01L29/518 , Y10S148/003 , Y10S148/013 , Y10S148/014 , Y10S148/114
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2.发明公开Laser surface modification for seeding substrates 失效Oberflächen-Modifikation durch Laser zum Aktivieren von Substraten。
公开(公告)号：EP0377867A2
公开(公告)日：1990-07-18
申请号：EP89123434.6
申请日：1989-12-19
IPC分类号： H01L21/48
CPC分类号： H01L21/4846 , C23C18/1868 , C23C18/1889 , C23C18/1893 , H05K1/0306 , H05K3/185 , H05K2203/107
摘要： Method for selectively depositing metal onto ceramic and glass substrates by selectively melting a surface layer and thereafter contacting the melted surface with a seeding medium to deposit seed onto the melted surface. The seeded areas of the surface preferably are thereafter selectively plated with metal by contacting the surface with a suitable electroless plating solution.
摘要翻译： 通过选择性地熔化表面层然后使熔融的表面与接种介质接触以将种子沉积在熔融的表面上，从而选择性地将金属沉积到陶瓷和玻璃基板上的方法。 然后，优选地，通过使表面与合适的无电镀溶液接触来选择性地镀金属表面。
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公开(公告)号：EP0366958A2
公开(公告)日：1990-05-09
申请号：EP89118365.9
申请日：1989-10-04
发明人： Ameen, Joseph George , Funari, Joseph , Sammakia, Bahgat Ghaleb , Sissenstein, David William, Jr. , Smey, Samuel Louis
IPC分类号： C08K3/22 , C08L63/02 , H01L23/29 , H01L23/373
CPC分类号： C08L63/00 , C08K3/22 , H01B3/40 , H01L23/10 , H01L23/3737 , H01L24/29 , H01L24/83 , H01L2224/16225 , H01L2224/2919 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/0105 , H01L2924/01058 , H01L2924/01067 , H01L2924/01079 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/14 , H01L2924/15787 , H01L2924/16152 , H01L2924/16315 , C08L2666/22 , H01L2924/00 , H01L2924/3512
摘要： A curable composition containing an epoxide component that includes an epoxy polymer and hardening component, and zinc oxide, where the relative amount of said zinc oxide to said epoxide component is about 1:4 to about 2:1 and use thereof.
摘要翻译： 包含环氧聚合物和硬化成分的环氧化物成分的固化性组合物和氧化锌，其中所述氧化锌相对于所述环氧化物成分的相对量为约1:4〜约2:1及其用途。
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4.发明授权Method for producing coplanar multi-level metal/insulator films on a substrate 失效在基板上生产共晶多层金属/绝缘膜的方法
公开(公告)号：EP0224013B1
公开(公告)日：1990-02-07
申请号：EP86114396.4
申请日：1986-10-17
发明人： Chow, Melanie Min-Chieh , Cronin, John Edward , Guthrie, William Leslie , Kaanta, Carter Welling , Luther, Barbara Jean , Patrick, William John , Perry, Kathleen Alice , Standley, Charles Lambert
IPC分类号： H01L21/90 , H01L21/302
CPC分类号： H01L21/7681 , H01L21/304 , H01L21/32134 , H01L21/7684 , H01L21/76877 , H05K3/04 , H05K3/107 , H05K3/4644
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5.发明授权Method for selective electroless plating copper onto a non-conductive substrate surface 失效选择性电沉积铜到非导电基板表面的方法
公开(公告)号：EP0144612B1
公开(公告)日：1989-12-27
申请号：EP84112052.0
申请日：1984-10-09
发明人： Amelio, William Joseph , Lemon, Gary Kevin , Markovich, Voya , Panasik, Theodore , Sambucetti, Carlos Juan , Trevitt, Donna Jean
IPC分类号： C23C18/16
CPC分类号： H05K3/381 , C23C18/1605 , C23C18/1651 , C23C18/1893 , C23C18/2086 , C23C18/285 , C23C18/30 , C23C18/405 , H05K3/181 , H05K2203/1407
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公开(公告)号：EP0223987A3
公开(公告)日：1989-11-08
申请号：EP86113868.3
申请日：1986-10-07
IPC分类号： H01L21/312
CPC分类号： H01L21/02126 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3121 , Y10S65/901 , Y10S438/97
摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an 0₂ RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.
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公开(公告)号：EP0241718A3
公开(公告)日：1989-10-18
申请号：EP87103635.6
申请日：1987-03-13
IPC分类号： H05K3/42
CPC分类号： H05K3/0055 , H05K2203/095
摘要： Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.
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8.发明授权
公开(公告)号：EP0203423B1
公开(公告)日：1989-09-27
申请号：EP86106186.9
申请日：1986-05-06
发明人： Adwalpalker, Avinash Sripad , Harvilchuck, Joseph Matthew , Ranalli, Joseph Rocco , Rich, David William
CPC分类号： C04B41/009 , B23K20/233 , B23K35/001 , C04B41/52 , C04B41/89 , C04B2111/00844 , H01L21/4846 , H01L21/4853 , H01L2224/48463 , H01R43/16 , H05K3/24 , C04B41/5144 , C04B41/4572 , C04B41/5116 , C04B41/53 , C04B35/00
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10.发明授权Process for producing integrated semiconductor device structures with a mesa configuration and structure of said type 失效用MESA配置和结构类型生成集成半导体器件结构的方法
公开(公告)号：EP0061729B1
公开(公告)日：1989-08-23
申请号：EP82102504.6
申请日：1982-03-25
CPC分类号： H01L21/76885 , C08G12/34 , C08G12/40 , H01L21/3086 , H01L21/76202 , H01L29/735 , H01L29/8605 , H01L29/872
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