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公开(公告)号：EP0256216B1
公开(公告)日：1993-08-04
申请号：EP87106476.2
申请日：1987-05-05
CPC分类号： H01J37/32935 , G01N21/6402 , G01N2201/1222 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
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公开(公告)号：EP0068277B1
公开(公告)日：1986-02-05
申请号：EP82105213.1
申请日：1982-06-15
CPC分类号： H01L21/31683 , C23C8/10 , C23F1/20
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3.发明公开Method for forming a copper based metal pattern 失效Verfahren zum Herstellen eines Metallmusters auf Kupferbasis。
公开(公告)号：EP0054663A1
公开(公告)日：1982-06-30
申请号：EP81108552.1
申请日：1981-10-20
CPC分类号： C23F4/00 , H05K3/062 , H05K3/388 , H05K2201/0175 , H05K2201/0317 , H05K2203/095 , Y10S438/945 , Y10T428/12611 , Y10T428/12826
摘要： A composite mask (5A, 6A) is formed by sequentially depositing blanket layers (5) and (6) of molybdenum and of a material respectively selected from the group consisting of MgO and Al 2 O 3 on the surface of a copper layer (3), and producing in these layers (5) and (6) a pattern of openings corresponding to the negative of the desired copper pattern (3). Using said mask (5A, 6A) the portions of copper layer (3) exposed in said openings are removed, preferably by dry etching. MgO or Al 2 O 3 adhere well to Mo and Mo adheres well to copper. The Mo layer (5A) also serves as a diffusion barrier'for the copper.
The method is applicable in forming copper interconnect metallurgy for components such as semiconductor or dielectric substrates.摘要翻译： 复合掩模（5A，6A）通过在铜层（3）的表面上顺序地沉积钼和选自MgO和Al 2 O 3的材料的钼层和（6）层而形成，以及 在这些层（5）和（6）中产生对应于所需铜图案（3）的负极的开口图案。 使用所述掩模（5A，6A），优选通过干蚀刻去除在所述开口中暴露的铜层（3）的部分。 MgO或Al2O3很好地粘附到Mo和Mo附着到铜上。 Mo层（5A）也用作铜的扩散阻挡层。 ...该方法可用于形成用于诸如半导体或电介质基板的部件的铜互连冶金。
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4.发明公开A method of treating aluminium microcircuits 失效Verfahren zur Behandlung von Mikroschaltkreisen aus铝。
公开(公告)号：EP0010138A1
公开(公告)日：1980-04-30
申请号：EP79103102.4
申请日：1979-08-23
CPC分类号： H01L21/02071 , C23C8/12 , H01L21/31683
摘要： Aluminium microcircuits which have been prepared by reactive-ion etching are stablized against open circuits and short circuits by treating the microcircuits in an oxygen- containing atmosphere at a temperature of from 200°C to 450°C.
摘要翻译： 通过反应离子蚀刻制备的铝微电路通过在200℃至450℃的温度下在含氧气氛中处理微电路而稳定在开路和短路。
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5.发明公开Trench etch endpoint detection by laser-induced fluorescence 失效Feststellung des Endpunktes beim Graben-Ätzendurch laserinduzierte Fluoreszenz。
公开(公告)号：EP0256216A2
公开(公告)日：1988-02-24
申请号：EP87106476.2
申请日：1987-05-05
CPC分类号： H01J37/32935 , G01N21/6402 , G01N2201/1222 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： Laser induced fluorescence is utilized to detect the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a wafer selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to any of the other layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are de-energized.
摘要翻译： 通过检测来自蚀刻等离子体中晶片的晶片选择的次要物质的浓度的大的变化，利用激光诱导荧光来检测晶片中给定层的反应离子蚀刻。 为了提供适当的端点检测，与所述晶片中的任何其它层相比，所选择的次要物质必须以与蚀刻的给定层中的显着不同的浓度存在。 在一个实施例中，当检测到所选择的次要物质浓度的大的变化时，反应器的RF电极被断电。
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6.发明公开Package comprising a substrate, a conductive interconnection pattern and a superposed conductive structure and a method to form part of such a package 失效包含基板，导电互连图案和超导导电结构的封装以及形成这种封装的一部分的方法
公开(公告)号：EP0046525A3
公开(公告)日：1984-07-25
申请号：EP81106121
申请日：1981-08-05
发明人： Logan, Joseph Skinner , Mauer IV, John Lester , Rothman, Laura Beth , Schwartz, Geraldine Cogin , Standley, Charles Lambert
CPC分类号： H01L23/5226 , H01L21/4846 , H01L21/7688 , H01L2924/0002 , H01L2924/09701 , Y10S438/951 , H01L2924/00
摘要： The package has at least two levels of conductive interconnected patterns (26, 50A. 50B). The insulation containing the metal filled via openings (36) between the different levels consists of a lower layer (30) of an electrically insulating organic polymer and an overlying oxygen plasma resistant inorganic insulating layer (23). In the formation of the interconnection metallurgy inorganic insulating layer (23) prohibits overetching in producing the hole pattern in the organic insulating layer (42) laterally surrounding the conductive pattern (50A, 50B) in the next level. The entirety of the insulation between the levels is thus ensured.
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公开(公告)号：EP0010138B1
公开(公告)日：1983-01-19
申请号：EP79103102.4
申请日：1979-08-23
CPC分类号： H01L21/02071 , C23C8/12 , H01L21/31683
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8.发明公开Method for passivating aluminum-based metallizations 失效维尔法罕Zum Passivieren von auf铝basierendenMetallbelägen。
公开(公告)号：EP0068277A1
公开(公告)日：1983-01-05
申请号：EP82105213.1
申请日：1982-06-15
CPC分类号： H01L21/31683 , C23C8/10 , C23F1/20
摘要： Aluminium-based alloy films and metallization layers that are patterned by reactive ion etching (RIE) are passivated by etching surface portions of the films or layers with a phosphoric-chromic mixture to remove contaminants and then oxidizing the exposed surface portions in an oxygen atmosphere.
摘要翻译： 通过反应离子蚀刻（RIE）图案化的铝基合金膜和金属化层通过用磷酸铬混合物蚀刻表面部分来钝化，以除去污染物，然后在氧气氛中氧化暴露的表面部分。
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9.发明公开
公开(公告)号：EP0046525A2
公开(公告)日：1982-03-03
申请号：EP81106121.7
申请日：1981-08-05
发明人： Logan, Joseph Skinner , Mauer IV, John Lester , Rothman, Laura Beth , Schwartz, Geraldine Cogin , Standley, Charles Lambert
CPC分类号： H01L23/5226 , H01L21/4846 , H01L21/7688 , H01L2924/0002 , H01L2924/09701 , Y10S438/951 , H01L2924/00
摘要： The package has at least two levels of conductive interconnected patterns (26, 50A. 50B). The insulation containing the metal filled via openings (36) between the different levels consists of a lower layer (30) of an electrically insulating organic polymer and an overlying oxygen plasma resistant inorganic insulating layer (23).
In the formation of the interconnection metallurgy inorganic insulating layer (23) prohibits overetching in producing the hole pattern in the organic insulating layer (42) laterally surrounding the conductive pattern (50A, 50B) in the next level. The entirety of the insulation between the levels is thus ensured.摘要翻译： 所述封装具有的导电性连通图案（26，50A，50B）至少两个级别。 绝缘含不同电平之间的电绝缘覆氧等离子体性无机绝缘层（23）的有机聚合物末端的下层（30）的besteht经由开口（36）填充的金属。 ... 在互连冶金无机绝缘层（23）的形成过蚀刻禁止在有机绝缘层（42）在产生孔图案尾盘反弹周围在下一级别的导体图案（50A，50B）。 电平之间的绝缘的整体因此确保。
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公开(公告)号：EP0256216A3
公开(公告)日：1989-01-25
申请号：EP87106476.2
申请日：1987-05-05
CPC分类号： H01J37/32935 , G01N21/6402 , G01N2201/1222 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： Laser induced fluorescence is utilized to detect the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a wafer selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to any of the other layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are de-energized.
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