发明公开
EP0111932A2 Resin-molded semiconductor devices and a process for manufacturing the same
失效
Harzgekapselte Halbleiteranordnungen und ein Verfahren zum Herstellen derselben。
- 专利标题： Resin-molded semiconductor devices and a process for manufacturing the same
- 专利标题（中）： Harzgekapselte Halbleiteranordnungen und ein Verfahren zum Herstellen derselben。
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申请号： EP83112853.3申请日： 1983-12-20
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公开(公告)号： EP0111932A2公开(公告)日： 1984-06-27
- 发明人: Hidaka, Toshiyuki , Sakamoto, Hisashi , Fukuhara, Toshiaki , Fujieda, Sadao , Misawa, Yutaka
- 申请人： HITACHI, LTD.
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Beetz & Partner Patentanwälte
- 优先权： JP224483/82 19821220
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L23/30
摘要：
The invention relates to resin-molded axial lead-type semiconductor devices comprising a sub-assembly consisting of a semiconductor pellet (1) brazed between a pair of axial leads (5). The sub-assembly is sealed in an epoxy resin, which is formed by applying an epoxy resin, preferably a one-can-epoxy resin, onto the sub-assembly followed by curing the epoxy resin. Preferably, an epoxy resin having a thixotropic index of 1.0 to 2.5 and a gelation time 0.8 to 3 minutes is used.
The invention further relates to a process for manufacturing these semiconductor devices which is characterised by:
(A) horizontally holding the sub-assembly and dropping a predetermined amount of an epoxy resin onto the semiconductor pellet while turning the sub-assembly with the axial leads as rotation axis,
(B) curing the epoxy resin, preferably by heating at 160° to 180°C for a period of 2 to 10 min, while turning the sub-assembly, so that the surface portions of the epoxy resin are cured, and
(C) curing the epoxy resin, preferably by heating at 160° to 200°C for a period of 3 to 24 h while maintaining the sub-assembly stationary without turning it, so that the epoxy resin is completely hardened.
The invention further relates to a process for manufacturing these semiconductor devices which is characterised by:
(A) horizontally holding the sub-assembly and dropping a predetermined amount of an epoxy resin onto the semiconductor pellet while turning the sub-assembly with the axial leads as rotation axis,
(B) curing the epoxy resin, preferably by heating at 160° to 180°C for a period of 2 to 10 min, while turning the sub-assembly, so that the surface portions of the epoxy resin are cured, and
(C) curing the epoxy resin, preferably by heating at 160° to 200°C for a period of 3 to 24 h while maintaining the sub-assembly stationary without turning it, so that the epoxy resin is completely hardened.
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