公开(公告)号：EP0111932A3

公开(公告)日：1985-08-28

申请号：EP83112853

申请日：1983-12-20

申请人： HITACHI, LTD.

发明人： Hidaka, Toshiyuki ,  Sakamoto, Hisashi ,  Fukuhara, Toshiaki ,  Fujieda, Sadao ,  Misawa, Yutaka

IPC分类号： H01L21/56 ,  H01L23/30

CPC分类号： H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L2924/0002 ,  Y10T29/49171 ,  H01L2924/00

摘要： The invention relates to resin-molded axial lead-type semiconductor devices comprising a sub-assembly consisting of a semiconductor pellet (1) brazed between a pair of axial leads (5). The sub-assembly is sealed in an epoxy resin, which is formed by applying an epoxy resin, preferably a one-can-epoxy resin, onto the sub-assembly followed by curing the epoxy resin. Preferably, an epoxy resin having a thixotropic index of 1.0 to 2.5 and a gelation time 0.8 to 3 minutes is used. The invention further relates to a process for manufacturing these semiconductor devices which is characterised by:
(A) horizontally holding the sub-assembly and dropping a predetermined amount of an epoxy resin onto the semiconductor pellet while turning the sub-assembly with the axial leads as rotation axis, (B) curing the epoxy resin, preferably by heating at 160° to 180°C for a period of 2 to 10 min, while turning the sub-assembly, so that the surface portions of the epoxy resin are cured, and (C) curing the epoxy resin, preferably by heating at 160° to 200°C for a period of 3 to 24 h while maintaining the sub-assembly stationary without turning it, so that the epoxy resin is completely hardened.

公开(公告)号：EP0111932B1

公开(公告)日：1988-07-20

申请号：EP83112853.3

申请日：1983-12-20

申请人： HITACHI, LTD.

发明人： Hidaka, Toshiyuki ,  Sakamoto, Hisashi ,  Fukuhara, Toshiaki ,  Fujieda, Sadao ,  Misawa, Yutaka

IPC分类号： H01L21/56 ,  H01L23/30

CPC分类号： H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L2924/0002 ,  Y10T29/49171 ,  H01L2924/00

公开(公告)号：EP0111932A2

公开(公告)日：1984-06-27

申请号：EP83112853.3

申请日：1983-12-20

申请人： HITACHI, LTD.

发明人： Hidaka, Toshiyuki ,  Sakamoto, Hisashi ,  Fukuhara, Toshiaki ,  Fujieda, Sadao ,  Misawa, Yutaka

IPC分类号： H01L21/56 ,  H01L23/30

CPC分类号： H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3171 ,  H01L2924/0002 ,  Y10T29/49171 ,  H01L2924/00

摘要： The invention relates to resin-molded axial lead-type semiconductor devices comprising a sub-assembly consisting of a semiconductor pellet (1) brazed between a pair of axial leads (5). The sub-assembly is sealed in an epoxy resin, which is formed by applying an epoxy resin, preferably a one-can-epoxy resin, onto the sub-assembly followed by curing the epoxy resin. Preferably, an epoxy resin having a thixotropic index of 1.0 to 2.5 and a gelation time 0.8 to 3 minutes is used.
The invention further relates to a process for manufacturing these semiconductor devices which is characterised by:

(A) horizontally holding the sub-assembly and dropping a predetermined amount of an epoxy resin onto the semiconductor pellet while turning the sub-assembly with the axial leads as rotation axis,
(B) curing the epoxy resin, preferably by heating at 160° to 180°C for a period of 2 to 10 min, while turning the sub-assembly, so that the surface portions of the epoxy resin are cured, and
(C) curing the epoxy resin, preferably by heating at 160° to 200°C for a period of 3 to 24 h while maintaining the sub-assembly stationary without turning it, so that the epoxy resin is completely hardened.

摘要翻译： 本发明涉及树脂模制的轴向引线型半导体器件，其包括由钎焊在一对轴向引线（5）之间的半导体芯片（1）组成的子组件。 该子组件被密封在环氧树脂中，环氧树脂通过将环氧树脂（优选一罐环氧树脂）施加到子组件上，随后固化环氧树脂而形成。 优选使用触变指数为1.0〜2.5，凝胶化时间为0.8〜3分钟的环氧树脂。 本发明还涉及一种制造这些半导体器件的方法，其特征在于：（A）水平保持子组件并将预定量的环氧树脂滴落到半导体芯片上， 装配轴向引线作为旋转轴，...（B）固化环氧树脂，优选在160°至180°加热2至10分钟的时间，同时转动子组件，使表面部分 环氧树脂固化，（C）固化环氧树脂，优选在160〜200℃下加热3〜24小时，同时保持组件不转动，使环氧树脂成为 完全硬化。