发明公开
EP0156647A2 Thin film transistor and method of making the same
失效
Dünnfilmtransistor和Verfahren zur Herstellung。
- 专利标题： Thin film transistor and method of making the same
- 专利标题（中）： Dünnfilmtransistor和Verfahren zur Herstellung。
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申请号： EP85302159.0申请日： 1985-03-28
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公开(公告)号： EP0156647A2公开(公告)日： 1985-10-02
- 发明人: Tsukada, Toshihisa , Nakano, Toshio , Sasano, Akira , Seki, Koichi
- 申请人： HITACHI, LTD.
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 100 JP
- 代理机构： Calderbank, Thomas Roger
- 优先权： JP60669/84 19840330
- 主分类号： H01L29/62
- IPC分类号： H01L29/62 ; H01L29/72 ; H01L29/80
摘要：
@ A thin film transistor has a layer (15) formed by the interfacial reaction between amorphous silicon and metal, which is used as a central or base electrode (15,11). The base electrode (15, 11) is in the shape of stripes or a flat surface. The base electrode (15, 11) is sandwiched between the emitter (4, 5, 14, 10) and collector (4, 5, 6, 12) of the transistor, which may each consist of an n-type hydrogenated amorphous silicon layer (5) and an intrinsic hydrogenated amorphous silicon layer (4), with the intrinsic hydrogenated amorphous silicon layer (4) being close to the base electrode (15, 11). There may be p-type hydrogenated amorphous silicon layers between the base electrode (15, 11) and the intrinsic hydrogenated amorphous silicon layer.
公开/授权文献
- EP0156647B1 Thin film transistor and method of making the same 公开/授权日：1989-07-19
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