发明公开
- 专利标题: Reversible memory system
- 专利标题(中): 可移动存储系统。
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申请号: EP85116606.6申请日: 1985-12-27
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公开(公告)号: EP0186911A2公开(公告)日: 1986-07-09
- 发明人: Ikegawa, Sumio c/o Patent Division , Terashima, Yoshiaki c/o Patent Division , Yasuda, Nobuaki c/o Patent Division , Ichihara, Katsutarou c/o Patent Division , Komatsu, Shuichi c/o Patent Division , Arai, Shinji c/o Patent Division
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构: Henkel, Feiler, Hänzel & Partner
- 优先权: JP276098/84 19841228; JP247963/85 19851107; JP247964/85 19851107
- 主分类号: G11B7/24
- IPC分类号: G11B7/24 ; G11B11/00
摘要:
in a reversible memory system, a pulsed laser beam generated from a laser unit is directed to a recording layer (2) formed on a substrate 1. The recording layer (2) essentially consists of a recording medium, for example, an iron-nickel alloy containing iron as a mayor component and 27 to 30 atomic % of nickel, which undergoes martensite transformation from a low-temperature phase (D) to a high-temperature phase (E) at a predetermined temperature Af and which undergoes a stress-induced transformation (a 2 ) at a characteristic temperature Md. When a region of the recording layer is irradiated with the laser beam having a predetermined intensity, the region undergoes a stress-induced transformation (a 2 ) so that the region is changed from the high temperature phase (A) to the low temperature phase (8).
公开/授权文献
- EP0186911B1 Reversible memory system 公开/授权日:1991-01-23
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