- 专利标题： Semiconductor devices
-
申请号： EP86300865申请日： 1986-02-10
-
公开(公告)号： EP0202727A3公开(公告)日： 1988-03-23
- 发明人: Scovell, Peter Denis , Baker, Roger Leslie , Blomley, Peter Fred , Tomkins, Gary John
- 申请人： STC PLC
- 专利权人： STC PLC
- 当前专利权人： STC PLC
- 优先权： GB8507602 19850323
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/28 ; H01L29/08 ; H01L29/10
摘要：
A fully self-aligned polycrystalline silicon emitter bipolar transistor. Self-alignment of the p + base contact (12) is achieved by using oxidised sidewalls (8) (sidewall spacers) of the emitter mesa (7) as part of the p + base contact implantation mask. Collector contact (13) alignment can be achieved using oxidised sidewalls (17) of polycrystalline silicon alignment mesas (14) defined inthe same polysilicon asthe emitter mesa (7) but deposited on oxide (2) rather than the implanted base region (5).
信息查询
IPC分类:
