发明公开
EP0278290A3 Submicron dimension compound senmiconductor fabrication
失效
SubMICRON DIMENSION COMPOUND SENMICONDUCTOR FABRICATION
- 专利标题： Submicron dimension compound senmiconductor fabrication
- 专利标题（中）： SubMICRON DIMENSION COMPOUND SENMICONDUCTOR FABRICATION
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申请号： EP88100945.0申请日： 1988-01-22
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公开(公告)号： EP0278290A3公开(公告)日： 1990-07-25
- 发明人: Fossum, Eric Roy , Pettit, George David , Woodall, Jerry Mac Pherson , Kirchner, Peter Daniel , Warren, Alan Clark
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Schäfer, Wolfgang, Dipl.-Ing.
- 优先权： US12463 19870209
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/203 ; H01L29/72 ; H01L29/80 ; H01L21/00
摘要：
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
公开/授权文献
- EP0278290A2 Submicron dimension compound senmiconductor fabrication 公开/授权日：1988-08-17
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