发明公开
- 专利标题： Bi-cmos logic array
- 专利标题（中）： BI-CMOS逻辑阵列
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申请号： EP89200837.6申请日： 1989-04-03
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公开(公告)号： EP0351896A3公开(公告)日： 1991-02-27
- 发明人: Wong, Anthony Y. , Wong, Daniel , Chan, Steven S.
- 申请人： LSI LOGIC CORPORATION
- 申请人地址： 1551 McCarthy Boulevard Milpitas, CA 95035 US
- 专利权人： LSI LOGIC CORPORATION
- 当前专利权人： LSI LOGIC CORPORATION
- 当前专利权人地址： 1551 McCarthy Boulevard Milpitas, CA 95035 US
- 代理机构： Fieret, Johannes, Ir.
- 优先权： US209765 19880622
- 主分类号： H01L27/118
- IPC分类号： H01L27/118 ; H01L27/06
摘要：
An integrated circuit logic array is fabricated using a BiCMOS process so that it includes an optimum number of bipolar drivers. This is accomplished by means of a chip architecture having three regions: the array core is all CMOS logic gates; surrounding the core is a BiCMOS region; at the periphery of the array are simple bipolar and CMOS devices for I/O purposes. The chip can be fabricated to use these regions to create circuit paths of varying complexity, depending on the application. In a second embodiment, the array consists of cells each containing one bipolar device and several contiguous CMOS gates.
公开/授权文献
- EP0351896A2 Bi-cmos logic array 公开/授权日：1990-01-24
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