发明公开
- 专利标题： ECL-to-BiCMOS/CMOS translator
- 专利标题（中）： ECL到BiCMOS / CMOS转换器
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申请号： EP93307191.2申请日： 1993-09-13
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公开(公告)号： EP0590818A3公开(公告)日： 1994-05-11
- 发明人: Sinh, Nguyen , Yee, Loren
- 申请人： NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址： 2900 Semiconductor Drive, P.O. Box 58090 Santa Clara, California 95052-8090 US
- 专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： 2900 Semiconductor Drive, P.O. Box 58090 Santa Clara, California 95052-8090 US
- 代理机构： Bowles, Sharon Margaret
- 优先权： US955696 19921002
- 主分类号： H03K19/0175
- IPC分类号： H03K19/0175
摘要：
An ECL-to-BiCMOS/CMOS translator for translating a pair of differential ECL level signals into a BiCMOS/CMOS level signal is disclosed. The translator includes an output stage (42) having an output node (50) and a first output switching means (Q13) for coupling the output node (50) to a first voltage (-V DD ) supply and a second output switching means (Q14) for coupling the output node (50) to a second voltage supply (V SS ). A first input stage (38) activates the first output switching means (Q13) of the output stage (42) in response to one of the differential ECL signals, and a second input stage (40) activates the second output switching means (Q14) of the output stage (42) in response to the other differential ECL signal. The first input stage (38) includes a first input switching means (MP6) for coupling a first resistive element (R12) between the first voltage supply (-V DD ) and the output node (50) of the output stage (42), and the second input stage (40) includes a second input switching means (MP8) for coupling a second resistive element (R14) between the first voltage supply (V DD ) and the second voltage supply (V SS ).
公开/授权文献
- EP0590818A2 ECL-to-BiCMOS/CMOS translator 公开/授权日：1994-04-06
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