发明公开
EP0635882A2 A method of fabricating a silicon carbide vertical mosfet
失效
Verfahren zur Herstellung eines vertikalen MOSFET aus Siliziumkarbid。
- 专利标题： A method of fabricating a silicon carbide vertical mosfet
- 专利标题（中）： Verfahren zur Herstellung eines vertikalen MOSFET aus Siliziumkarbid。
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申请号： EP94109896.4申请日： 1994-06-27
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公开(公告)号： EP0635882A2公开(公告)日： 1995-01-25
- 发明人: Davis, Kenneth L. , Weitzel, Charles , Mellen, Neal J.
- 申请人： MOTOROLA, INC.
- 申请人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 专利权人： MOTOROLA, INC.
- 当前专利权人： MOTOROLA, INC.
- 当前专利权人地址： 1303 East Algonquin Road Schaumburg, IL 60196 US
- 代理机构： Hudson, Peter David
- 优先权： US90858 19930712
- 主分类号： H01L21/34
- IPC分类号： H01L21/34 ; H01L29/78
摘要：
A silicon carbide vertical MOSFET (30, 60) formed on a silicon carbide substrate (35, 65) with portions of epitaxial layers (39, 48 or 69, 78) defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening (40, 70) is formed in some of the epitaxial layers and a conductive layer (48, 85) is formed therein to electrically connect a drain contact (95) on the rear of the substrate to the components on the front of the substrate.
公开/授权文献
- EP0635882A3 A method of fabricating a silicon carbide vertical mosfet 公开/授权日：1995-10-11
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