发明授权
EP0699345B1 A FAST ACCESS AMG EPROM WITH SEGMENT SELECT TRANSISTORS WHICH HAVE AN INCREASED WIDTH AND METHOD OF MANUFACTURE 失效
与段选择晶体管具有放大宽,方法更快的存取时间AMG EPROM

A FAST ACCESS AMG EPROM WITH SEGMENT SELECT TRANSISTORS WHICH HAVE AN INCREASED WIDTH AND METHOD OF MANUFACTURE
摘要:
The current driven by the segment select transistors of an alternate-metal, virtual-ground (AMG) electrically programmable read-only-memory (EPROM), is increased by eliminating the even-numbered segment select transistors in every other row of segment select transistors, and the odd-numbered segment select transistors in the remaining rows, and by changing the current path through the segment so that the current flows from a segment select transistor in one row of segment select transistors to a segment select transistor in an adjacent row of transistors. By eliminating every other segment select transistor in each row of transistors, the maximum pitch of the segment select transistors can be substantially increased, thereby providing the required programming current, while at the same time maintaining the required isolation between adjacent segment select transistors.
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