发明授权
EP0699345B1 A FAST ACCESS AMG EPROM WITH SEGMENT SELECT TRANSISTORS WHICH HAVE AN INCREASED WIDTH AND METHOD OF MANUFACTURE
失效
与段选择晶体管具有放大宽,方法更快的存取时间AMG EPROM
- 专利标题: A FAST ACCESS AMG EPROM WITH SEGMENT SELECT TRANSISTORS WHICH HAVE AN INCREASED WIDTH AND METHOD OF MANUFACTURE
- 专利标题(中): 与段选择晶体管具有放大宽,方法更快的存取时间AMG EPROM
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申请号: EP95912876.0申请日: 1995-03-13
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公开(公告)号: EP0699345B1公开(公告)日: 2002-10-02
- 发明人: BERGEMONT, Albert
- 申请人: NATIONAL SEMICONDUCTOR CORPORATION
- 申请人地址: 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737 US
- 专利权人: NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人: NATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址: 1090 Kifer Road, M/S 16-135 Sunnyvale, CA 95086-3737 US
- 代理机构: Bowles, Sharon Margaret
- 优先权: US214818 19940316
- 国际公布: WO95025353 19950921
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; G11C16/04 ; H01L21/82
摘要:
The current driven by the segment select transistors of an alternate-metal, virtual-ground (AMG) electrically programmable read-only-memory (EPROM), is increased by eliminating the even-numbered segment select transistors in every other row of segment select transistors, and the odd-numbered segment select transistors in the remaining rows, and by changing the current path through the segment so that the current flows from a segment select transistor in one row of segment select transistors to a segment select transistor in an adjacent row of transistors. By eliminating every other segment select transistor in each row of transistors, the maximum pitch of the segment select transistors can be substantially increased, thereby providing the required programming current, while at the same time maintaining the required isolation between adjacent segment select transistors.
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