发明公开
EP0821396A3 Method and apparatus for measuring etch uniformity of a semiconductor
失效
用于测量半导体的蚀刻均匀性的方法和装置
- 专利标题： Method and apparatus for measuring etch uniformity of a semiconductor
- 专利标题（中）： 用于测量半导体的蚀刻均匀性的方法和装置
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申请号： EP97304913.3申请日： 1997-07-04
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公开(公告)号： EP0821396A3公开(公告)日： 2000-09-20
- 发明人: Buie, Melisa J. , Poslavsky, Leonid , Lewis, Jennifer
- 申请人： Applied Materials, Inc.
- 申请人地址： 3050 Bowers Avenue, Mail Stop 2634 Santa Clara, CA 95054 US
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： 3050 Bowers Avenue, Mail Stop 2634 Santa Clara, CA 95054 US
- 代理机构： Bayliss, Geoffrey Cyril
- 优先权： US686229 19960723
- 主分类号： H01J37/32
- IPC分类号： H01J37/32
摘要：
The disclosure relates to a method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system (100). The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.
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